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| 2MBI200NB-120-01 1200V / 200A 2 in one-package Features * VCE(sat) classified for easy parallel connection * High speed switching * Voltage drive * Low inductance module structure IGBT Module Applications * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply * Industrial machines, such as Welding machines Equivalent Circuit Schematic C2E1 Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous current 1ms 1ms Max. power dissipation Operating temperature Storage temperature Isolation voltage Screw torque Rating Unit Symbol 1200 V VCES 20 V VGES 200 A IC 400 A IC pulse 200 A -IC 400 A -IC pulse 1500 W PC +150 C Tj -40 to +125 C Tstg AC 2500 (1min.) V Vis 3.5 N*m Mounting *1 4.5 N*m Terminals *2 C1 E2 G1 E1 G2 Current control circuit E2 VCE(sat) classification Rank F A B C D E Lenge 2.25 to 2.50V 2.40 to 2.65V 2.55 to 2.80V 2.70 to 2.95V 2.85 to 3.10V 3.00 to 3.30V *1 : Recommendable value : 2.5 to 3.5 N*m (M5) or (M6) *2 : Recommendable value : 3.5 to 4.5 N*m (M6) Electrical characteristics (at Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Diode forward on voltage Reverse recovery time Symbol No ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF trr t eco r Characteristics Min. Typ. - - 4.5 - - - - - - - - - - me m df n Max. 2.0 30 7.5 3.3 - - - 1.2 0.6 1.5 0.5 3.0 0.35 o ne r de w n sig Conditions Ic = 200A VGE = 15V Tj = 25C . Conditions VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=200mA VGE=15V, IC=200A VGE=0V VCE=10V f=1MHz VCC=600V IC=200A VGE=15V RG=4.7ohm IF=200A, VGE=0V IF=200A Unit mA A V V pF - - - - 32000 11600 10320 0.65 0.25 0.85 0.35 - - s V s Thermal resistance characteristics Item Symbol Rth(j-c) Rth(j-c) Rth(c-f)* Characteristics Min. Typ. - - - - - 0.025 Conditions Max. 0.085 0.18 - IGBT Diode the base to cooling fin C/W C/W C/W Unit Thermal resistance * : This is the value which is defined mounting on the additional cooling fin with thermal compound 2MBI200NB-120-01 Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj=25C 500 500 IGBT Module Collector current vs. Collector-Emitter voltage Tj=125C 400 400 Collector current : Ic [A] Collector current : Ic [A] 300 300 200 200 100 100 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=25C Collector-Emitter vs. Gate-Emitter voltage Tj=125C 10 VCE [V] VCE [V] 10 8 8 Collector-Emitter voltage : 6 Collector-Emitter voltage : 6 4 2 0 0 5 10 Gate-Emitter voltage : VGE [V] No t 15 com re 20 me 25 df n 2 0 0 4 o ne r 5 de w n sig . 10 15 20 25 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=600V, RG=4.7 ohm, VGE=15V, Tj=25C 1000 1000 Switching time : ton, tr, toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.] Switching time vs. Collector current Vcc=600V, RG=4.7 ohm, VGE=15V, Tj=125C 100 100 10 0 100 200 Collector current : Ic [A] 300 400 10 0 100 200 Collector current : Ic [A] 300 400 2MBI200NB-120-01 IGBT Module Switching time vs. RG Vcc=600V, Ic=200A, VGE=15V, Tj=25C 1000 Dynamic input characteristics Tj=25C 25 Switching time : ton, tr, toff, tf [n sec.] Collector-Emitter voltage : VCE [V] 800 20 1000 600 15 400 10 200 5 100 0 10 Gate resistance : RG [ohm] 0 500 1000 1500 2000 2500 Gate charge : Qg [nC] 0 Forward current vs. Forward voltage VGE=0V 500 Reverse recovery characteristics trr, Irr, vs. IF Reverse recovery current : Irr [A] Reverse recovery time : trr [n sec.] 400 Forward current : IF [A] 300 200 100 0 0 1 2 Forward voltage : VF [V] No t 3 eco r 4 me m 5 df n 0 100 o ne r 100 de w n sig . 200 Forward current : IF [A] 300 400 Transient thermal resistance 2000 Reversed biased safe operating area +VGE=15V, -VGE < 15V, Tj < 125C, RG > 4.7ohm = = = Thermal resistance : Rth (j-c) [C/W] 1600 0.1 Collector current : Ic [A] 1200 0.01 800 400 0.001 0.001 0.01 0.1 1 Pulse width : PW [sec.] 0 0 200 400 600 800 1000 1200 Collector-Emitter voltage : VCE [V] Gate-Emitter voltage : VGE [V] 2MBI200NB-120-01 IGBT Module Switching loss vs. Collector current Vcc=600V, RG=4.7 ohm, VGE=15V Capacitance vs. Collector-Emitter voltage Tj=25C 60 Switching loss : Eon, Eoff, Err [mJ/cycle] 100 50 Capacitance : Cies, Coes, Cres [nF] 40 30 10 20 10 0 0 100 200 Collector current : Ic [A] 300 400 1 0 5 10 15 20 25 30 35 Collector-Emitter voltage : VCE [V] Outline Drawings, mm No t eco r me m df n o ne r de w n sig . |
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